Self-aligned V0-contact for cell size reduction

US7061035B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Jingyu Lian · Plattekill, US
• Nicolas Nagel · Yokohama, JP
• Stefan Gernhardt · Yokohama, JP
• Rainer Bruchhaus · Yokohama, JP
• Andreas Hilliger · Yokohama, JP
• Uwe Wellhausen · Dresden, DE

Key dates

• Filing date: Oct 1, 2003
• Grant date: Jun 13, 2006
• Expiry date: Oct 1, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/682
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An FeRAM comprising includes a ferroelectric material sandwiched between a top electrode and a bottom electrode. A V0-contact provides an electrical connection with an underlying CS-contact. The V0-contact is aligned using the bottom electrode. A liner layer covers a sidewall of the bottom electrode and provides a stop to an etch a hole forming the V0-contact. A method is utilized to form a V0-contact in an FeRAM comprising. An Fe capacitor of the FeRAM is encapsulated, a bottom electrode is etched, a liner layer is deposited covering a sidewall of the bottom electrode, and a hole is etched for the VO-contact until the etching is stopped by the liner layer.