High frequency substrate comprised of dielectric layers of different dielectric coefficients
US7061347B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 31, 2003 |
| Grant date | Jun 13, 2006 |
| Priority date | — |
| Expiry date | Dec 31, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/09309
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A high frequency substrate includes a first metal layer, a first dielectric layer, a second metal layer, a second dielectric layer and a high-frequency signal transmission line. The first dielectric layer is formed on the first metal layer, and the second metal layer is formed on the first dielectric layer. The first and second metal layers are maintained in a stable voltage status due to the high dielectric coefficient of the first dielectric layer. Besides, the second dielectric layer is formed on the second metal layer. High speed and high frequency transmission are achieved when signals transmitting in the high-frequency transmission line formed on the second dielectric layer due to the low dielectric coefficient of the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.