Photomask, in particular alternating phase shift mask, with compensation structure

US7063921B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Wolfgang Dettman · Munich, DE
• Josef Mathuni · Munich, DE
• Oliver Fagerer · Dietramszell, DE
• Bettina Schiessl · Aschheim, DE
• Stephen Rahn · Höhenkirchen-Siegertsbrunn, DE

Key dates

• Filing date: Sep 22, 2003
• Grant date: Jun 20, 2006
• Expiry date: May 31, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T403/5773
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The invention relates to a method for the production of masks, in particular for the production of alternating phase shift masks (1), or of chromeless phase shift masks or phase shift masks structured by quartz etching, respectively, as well as to a mask (1), in particular photomask, for the production of semiconductor devices, comprising at least one product field area (6a) and a compensation structure (5) positioned outside the product field area (6a), wherein the compensation structure (5) comprises at least one electroconductive region (8b) that is electrically connected with the product field area (6a).