Semiconductor device having aluminum conductors
US7064437B2 · kind B2 · utility
3Cited by
11References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 1, 2002 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Jul 1, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a semiconductor device having high reliability, high yield, and such a interconnection structure as short hardly occurs. The semiconductor device comprises a semiconductor substrate, metal conductors formed on a side of a main face of the substrate which metal conductors contain aluminum as main constituent thereof and copper as an additive element, the metal conductors being made to contain such an element as to suppress the precipitation of copper or being made to have such a film adjacent to the metal conductor as to suppress the precipitation of copper.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.