Evaluating a multi-layered structure for voids
US7064822B2 · kind B2 · utility
5Cited by
45References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 25, 2005 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Apr 25, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2656
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. One of the two measurements is of resistance per unit length. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.