Method of verifying an optical proximity correction (OPC) model
US7065738B1 · kind B1 · utility
29Cited by
9References
7Claims
0Family size
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Key dates
| Filing date | May 4, 2004 |
| Grant date | Jun 20, 2006 |
| Priority date | — |
| Expiry date | Sep 23, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/68
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method verifying an optical proximity correction (OPC) model is disclosed. The method can include correcting a test pattern having a plurality of structures and extracting critical dimension (CD) values from a corrected output file for layout locations corresponding to a plurality of selected structures of the test pattern. A data set from the extracted CD values can be developed where the data set is indicative of corrected test pattern CD versus pitch for at least one target CD. Also disclosed is a method of collecting wafer test measurement data.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.