Modified clean chemistry and megasonic nozzle for removing backside CMP slurries
US7067015B2 · kind B2 · utility
3Cited by
9References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 31, 2002 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Nov 12, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A cleaning chemistry for lowering defect levels on the backside of a semiconductor wafer after chemical mechanical planarization (CMP). In a preferred embodiment of the present invention, a cleaning chemistry comprising nitric acid, hydrofluoric acid, and phosphoric acid in solution with deionized water is applied to the wafer surface to be cleaned preferably while subjected to megasonic assist cleaning. The wafer is preferably then subjected to brush scrubbing and a deionized water rinse with megasonic assist cleaning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.