Pattern compensation techniques for charged particle lithographic masks
US7067220B2 · kind B2 · utility
0Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2002 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Jun 14, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of producing a particle beam mask and mask structures to allow for the use of dummy fill shapes. This invention overcomes distortion in by adding a dummy shape in unexposed regions and applying a blocking layer to cover the dummy shape. The blocking layer is comprised of an aperture or additional mask mounted close to the mask or can be added to the mask itself.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.