Magnetic random access memory array with thin conduction electrical read and write lines
US7067330B2 · kind B2 · utility
33Cited by
8References
10Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Jul 16, 2004 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Aug 6, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1659
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An MTJ MRAM cell is formed between ultra-thin orthogonal word and bit lines of high conductivity material whose thickness is less than 100 nm. Lines of this thickness produce switching magnetic fields at the cell free layer that are enhanced by a factor of approximately two for a given current. The fabrication of a cell with such thin lines is actually simplified as a result of the thinner depositions because the fabrication process eliminates the necessity of removing material by CMP during patterning and polishing, thereby producing uniform spacing between the lines and the cell free layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.