Applied Spintronics, Inc.
31Patents
11Active
31Granted
40Portfolio score
Filing activity: Apr 1, 2004 → Dec 14, 2007 · 11 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7449345B2 | Capping structure for enhancing dR/R of the MTJ device | Electricity | 133 | Expired |
| US7045368B2 | MRAM cell structure and method of fabrication | Electricity | 117 | Expired |
| US7476919B2 | MRAM cell structure and method of fabrication | Electricity | 98 | Active |
| US7241632B2 | MTJ read head with sidewall spacers | Electricity | 56 | Expired |
| US6979586B2 | Magnetic random access memory array with coupled soft adjacent magnetic layer | Physics | 45 | Expired |
| US6960480B1 | Method of forming a magnetic tunneling junction (MTJ) MRAM device and a tunneling magnetoresistive (TMR) read head | Electricity | 36 | Expired |
| US6974708B2 | Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM | Electricity | 35 | Expired |
| US7067330B2 | Magnetic random access memory array with thin conduction electrical read and write lines | Physics | 33 | Expired |
| US7211874B2 | Magnetic random access memory array with free layer locking mechanism | Physics | 30 | Expired |
| US7335961B2 | Magnetic random access memory array with coupled soft adjacent magnetic layer | Physics | 24 | Expired |
| US7499314B2 | Reference cell scheme for MRAM | Physics | 15 | Active |
| US7211447B2 | Structure and method to fabricate high performance MTJ devices for MRAM applications | Electricity | 14 | Expired |
| US7208807B2 | Structure and method to fabricate high performance MTJ devices for MRAM applications | Electricity | 14 | Expired |
| US7071009B2 | MRAM arrays with reduced bit line resistance and method to make the same | Electricity | 12 | Expired |
| US7122852B2 | Structure/method to fabricate a high performance magnetic tunneling junction MRAM | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7480172B2 | Programming scheme for segmented word line MRAM array | Physics | 11 | Active |
| US7321507B2 | Reference cell scheme for MRAM | Physics | 10 | Active |
| US7238979B2 | Buffer (seed) layer in a high-performance magnetic tunneling junction MRAM | Electricity | 10 | Expired |
| US7045841B2 | Oxidation structure/method to fabricate a high-performance magnetic tunneling junction MRAM | Electricity | 9 | Expired |
| US7369376B2 | Amorphous layers in a magnetic tunnel junction device | Physics | 8 | Active |
| US7085183B2 | Adaptive algorithm for MRAM manufacturing | Physics | 8 | Expired |
| US7362644B2 | Configurable MRAM and method of configuration | Physics | 8 | Expired |
| US7132707B2 | Magnetic random access memory array with proximate read and write lines cladded with magnetic material | Physics | 7 | Expired |
| US7544983B2 | MTJ read head with sidewall spacers | Electricity | 6 | Active |
| US7217577B2 | Structure/method to fabricate a high-performance magnetic tunneling junction MRAM | Emerging Cross-Sectional Technologies | 5 | Active |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.