Semiconductor structure, semiconductor device, communicating device, integrated circuit, and process for fabricating the same
US7067856B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 2, 2004 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Feb 2, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.