Conductive memory device with conductive oxide electrodes
US7067862B2 · kind B2 · utility
106Cited by
13References
43Claims
0Family size
Assignee
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Key dates
| Filing date | Oct 8, 2003 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Oct 8, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-resistive state element that uses barrier electrodes is provided. If certain materials are used as electrodes, the electrodes can be used for multiple purposes. Oxides and nitrides are especially well suited for acting as a barrier layer, and possibly even an adhesion layer and a sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.