Flash memory
US7068543B2 · kind B2 · utility
15Cited by
34References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 1, 2005 |
| Grant date | Jun 27, 2006 |
| Priority date | — |
| Expiry date | Sep 1, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Flash memory supporting methods for erasing memory cells using a decrease in magnitude of a source voltage of a first polarity to increase the magnitude of a control gate voltage of a second polarity during an erase period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.