Three-dimensional integrated CMOS-MEMS device and process for making the same
US7071031B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 28, 2003 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | May 28, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/16225
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A vertically integrated structure includes a micro-electromechanical system (MEMS) and a chip for delivering signals to the MEMS. The structure includes a metal stud connecting a surface of the chip and the MEMS; the MEMS has an anchor portion having a conducting pad on an underside thereof contacting the metal stud. The MEMS is spaced from the chip by a distance corresponding to a height of the metal stud, and the MEMS includes a doped region in contact with the conducting pad. In particular, the MEMS may include a cantilever structure, with the end portion including a tip extending in the vertical direction. A support structure (e.g. of polyimide) may surround the metal stud and contact both the underside of the MEMS and the surface of the chip. A temporary carrier plate is used to facilitate handling of the MEMS and alignment to the chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.