Method of forming a contact structure including a vertical barrier structure and two barrier layers
US7071055B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 7, 2004 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Apr 18, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to contact structures for use in integrated circuits and methods of fabricating contact structures. In one embodiment, a contact structure includes a conductive layer, one or more barrier layers formed above the conductive layer, and a barrier structure encircling the polysilicon layer and the one or more barrier layers. In an alternate embodiment, a contact structure is fabricated by forming a polysilicon layer on a substrate, forming a tungsten nitride layer above the polysilicon layer, and etching the polysilicon layer and the tungsten nitride layer to a level below the surface of a substrate structure. A silicon nitride layer is formed above the tungsten nitride layer, and a ruthenium silicide layer is formed above the silicon nitride layer. The ruthenium silicide layer is then polished.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.