Method for preparing a bonding surface of a semiconductor layer of a wafer
US7071077B2 · kind B2 · utility
8Cited by
17References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2004 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Apr 20, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
A method for preparing a bonding surface of a semiconductor layer of a wafer is described. The method includes treating the bonding surface to oxidize contaminants, and then cleaning the bonding surface to remove essentially all remaining contaminants. Ozone is then used to oxidize the bonding surface to improve the hydrophilic properties of the bonding surface. In an implementation, two wafers are prepared and then bonded together to form a structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.