Patent · US Expired

Process for the plasma etching of materials not containing silicon

US7071110B2 · kind B2 · utility

0Cited by

7References

7Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Josef Mathuni · Munich, DE
Günther Ruhl · Dorfen, DE

Key dates

Filing date	Jan 31, 2003
Grant date	Jul 4, 2006
Priority date	—
Expiry date	Jan 31, 2023

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/80
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process enables plasma etching of materials that do not contain silicon. The process is particularly suitable for the side wall passivation of chromium layers in masks for fabricating semiconductor components. The plasma contains oxygen and/or nitrogen, and at least one silicon-donating compound is introduced into the plasma. This allows efficient passivation of side walls.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.