Merged P-i-N schottky structure
US7071525B2 · kind B2 · utility
2Cited by
1References
9Claims
0Family size
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Key dates
| Filing date | Jan 27, 2004 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Jan 27, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/221
Abstract
A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.