Temperature compensation for silicon MEMS resonator
US7071793B2 · kind B2 · utility
31Cited by
23References
19Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 23, 2005 |
| Grant date | Jul 4, 2006 |
| Priority date | — |
| Expiry date | Feb 23, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/02511
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Thermally induced frequency variations in a micromechanical resonator are actively or passively mitigated by application of a compensating stiffness, or a compressive/tensile strain. Various composition materials may be selected according to their thermal expansion coefficient and used to form resonator components on a substrate. When exposed to temperature variations, the relative expansion of these composition materials creates a compensating stiffness, or a compressive/tensile strain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.