Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
US7074643B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Apr 24, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source region or a first conductivity type, a buried silicon carbide region of a second conductivity type opposite to the first conductivity type and a second conductivity type well region in a first conductivity type silicon carbide layer. The source region and the buried silicon carbide region are formed utilizing a first window of the mask layer. Then, the well region is formed utilizing a second window of the mask layer, the second window being provided by a subsequent etch of the mask layer having the first window.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.