Capacitor of semiconductor device and method for forming the same
US7074668B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2005 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Feb 28, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/10
Abstract
In a method for forming a capacitor for use in a semiconductor device, a nitride film for stopping etching, a first mold oxide film, an insulating film, deposited on a substrate are etched to expose the respective storage node contacts and thereby to form a plurality of contact holes arrayed in a zigzag pattern for storage electrodes. A sacrificial oxide film is deposited by burying the contact holes for storage electrodes in a thickness such that an outer portion of the storage electrodes having a relatively short interval is completely buried while an outer portion the storage electrodes having a relatively long interval is not completely buried. The sacrificial oxide film and the insulation film are etched back to form a support network enclosing the respective storage electrodes and interconnected to each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.