Low on resistance power MOSFET with variably spaced trenches and offset contacts
US7075147B2 · kind B2 · utility
22Cited by
3References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 8, 2004 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Jun 8, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
A power semiconductor device of the trench variety in which the trenches follow a serpentine path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.