Microelectromechanical systems and devices having thin film encapsulated mechanical structures
US7075160B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2003 |
| Grant date | Jul 11, 2006 |
| Priority date | — |
| Expiry date | Jun 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.