Patent · US Expired

Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system

US7075771B2 · kind B2 · utility

8Cited by
52References
26Claims
0Family size

Assignee

Inventor

Key dates

Filing dateMay 21, 2003
Grant dateJul 11, 2006
Priority date
Expiry dateAug 27, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/6833
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Apparatus and methods to compensating for radial non-uniformities in the plasma sheath at a substrate held by an electrostatic chuck in a plasma processing system. The substrate is held by a substrate-supporting surface of the electrostatic chuck. The substrate-supporting surface is modified by providing a pattern of features characteristic of a compensating structure that corrects the radial non-uniformities in the plasma sheath and then covering the features conformally with a planarization coating of a dielectric material. The dielectric material fills and covers the pattern of features to provide multiple parallel capacitances defining the compensating structure. The pattern of features characterizing the compensating structure may be determined from a radial non-uniformity in a plasma-related parameter at the substrate-supporting surface.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.