Etch selectivity enhancement for tunable etch resistant anti-reflective layer
US7077903B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 2003 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Dec 29, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for generating a nanostructure and for enhancing etch selectivity, and a nanostructure are disclosed. The invention implements a tunable etch-resistant anti-reflective (TERA) material integration scheme which gives high etch selectivity for both etching pattern transfer through the TERA layer (used as an ARC and/or hardmask) with etch selectivity to the patterned photoresist, and etching to pattern transfer through a dielectric layer of nitride. This is accomplished by oxidizing a TERA layer after etching pattern transfer through the TERA layer to form an oxidized TERA layer having chemical properties similar to oxide. The methods provide all of the advantages of the TERA material and allows for high etch selectivity (approximately 5–10:1) for etching to pattern transfer through nitride. In addition, the methodology reduces LER and allows for trimming despite reduced photoresist thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.