CMOS imager with enhanced transfer of charge and low voltage operation
US7078745B2 · kind B2 · utility
8Cited by
2References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 5, 2003 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Aug 26, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/80
Abstract
A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a complete charge transfer between the charge collection region of the photodiode and a floating diffusion node. The dopant gradient region is formed by doping a region at one end of the channel with a low enhancement dopant and another region at the other end of the channel with a high enhancement dopant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.