Collarless trench DRAM device
US7078756B2 · kind B2 · utility
7Cited by
17References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2004 |
| Grant date | Jul 18, 2006 |
| Priority date | — |
| Expiry date | Dec 6, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0387
Abstract
The present invention provides collarless trench semiconductor memory devices having minimized vertical parasitic FET leakage and methods of forming the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.