Method of forming a silicon dioxide layer

US7081384B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Albert Birner · Regensburg, DE
• Matthias Goldbach · Dresden, DE
• Irene Sperl · Dresden, DE

Key dates

• Filing date: Apr 14, 2004
• Grant date: Jul 25, 2006
• Expiry date: Jul 23, 2024

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/964
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention refers to a method of forming a silicon dioxide layer by thermally oxidizing at least one monocrystalline silicon surface region on a semiconductor substrate. The silicon surface region has a curved surface. The method can include providing a semiconductor substrate having at least one monocrystalline silicon surface region having a curved surface, roughening the surface of the at least one monocrystalline silicon surface region to produce a layer of porous silicon, and thermally oxidizing the at least one roughened monocrystalline silicon surface.