Lithographic template and method of formation and use
US7083880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2002 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Jul 10, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/093
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention relates to semiconductor devices, microelectronic devices, micro electro mechanical devices, microfluidic devices, photonic devices, and more particularly to a lithographic template, a method of forming the lithographic template and a method for forming devices with the lithographic template. The lithographic template (10) is formed having a substrate (12), a transparent conductive layer (16) formed on a surface (14) of the substrate (12) by low pressure sputtering to a thickness that allows for preferably 90% transmission of ultraviolet light therethrough, and a patterning layer (20) formed on a surface (18) of the transparent conductive layer (16). The template (10) is used in the fabrication of a semiconductor device (30) for affecting a pattern in device (30) by positioning the template (10) in close proximity to semiconductor device (30) having a radiation sensitive material formed thereon and applying a pressure to cause the radiation sensitive material to flow into the relief image present on the template. Radiation is then applied through the template so as to cure portions of the radiation sensitive material and define the pattern in the radiation sensitive …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.