Methods of etching photoresist on substrates
US7083903B2 · kind B2 · utility
8Cited by
16References
35Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2003 |
| Grant date | Aug 1, 2006 |
| Priority date | — |
| Expiry date | Oct 15, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/427
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of etching a carbon-rich layer on organic photoresist overlying an inorganic layer can utilize a process gas including CxHyFz, where y≧x and z≧0, and one or more optional components to generate a plasma effective to etch the carbon-rich layer with low removal of the inorganic layer. The carbon-rich layer can be removed in the same processing chamber, or alternatively can be removed in a different processing chamber, as used to remove the bulk photoresist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.