Encapsulation of conductive lines of semiconductor devices
US7087438B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 26, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Jul 26, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
Abstract
The invention relates to a method of encapsulating conductive lines of semiconductor devices and a structure thereof. An encapsulating protective material, such as TaN, Ta, Ti, TiN, or combinations thereof is disposed over conductive lines of a semiconductor device. The encapsulating protective material protects the conductive lines from harsh etch chemistries when a subsequently deposited material layer is patterned and etched. The encapsulating protective material is conductive and may be left remaining in the completed semiconductor device. The encapsulating material is patterned using a masking material, and processing of the semiconductor device is then continued. The masking material may be left remaining in the structure as part of a subsequently deposited insulating material layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.