Method for detecting and compensating for positional displacements in photolithographic mask units and apparatus for carrying out the method
US7087910B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Aug 13, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31793
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for detecting and compensating for positional displacements of a photolithographic mask unit, includes providing mask production data for the writing of the mask unit with an electron beam. A structure density of the mask unit is input and an electron beam deflection is brought about on the mask unit in dependence on the determined structure density of the mask unit. The mask production data are corrected through the use of the determined electron beam deflection, in order to obtain corrected mask production data, and the corrected mask production data are output. A lithography apparatus for mask units with correction of positional displacements of the mask unit, is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.