Semiconductor light emitting element and method of making same
US7087930B2 · kind B2 · utility
7Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Jun 11, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor light emitting element that is made by using the lateral growth function of semiconductor crystal while providing an ELO mask on a crystal growth surface of a crystal growth substrate. At least part of a sidewall of the ELO mask is provided with an inclined plane that is inclined to the crystal growth surface such that the semiconductor crystal to be formed on the ELO mask substantially has no void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.