Flash memory cell, flash memory device and manufacturing method thereof

US7087950B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Josef Willer · Riemerling, DE
• Frank Lau · Bruckmühl, DE

Key dates

• Filing date: Apr 30, 2004
• Grant date: Aug 8, 2006
• Expiry date: May 25, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6211

Abstract

The present invention relates to a flash memory cell comprising a silicon substrate having an active region comprising a channel region and source-/drain-regions, the active region comprising a projecting portion, which projecting portion at least comprising said channel region; a tunneling dielectric layer formed on the surface of said active region; a floating gate formed on the surface of said tunneling dielectric layer for storing electric charges; an inter-gates coupling dielectric layer formed on the surface of said floating gate, and a control gate formed on the surface of said inter-gates coupling dielectric layer, wherein said floating gate is formed to have a groove-like shape for at least partly encompassing said projecting portion of said active region. This invention further relates to a flash memory device comprising such flash memory cells, as well as a manufacturing method thereof.