Dual function FinFET, finmemory and method of manufacture

US7087952B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Huilong Zhu · Poughkeepsie, US
• Bruce B. Doris · Brewster, US
• Jochen Beintner · Wappingers Falls, US

Key dates

• Filing date: Nov 1, 2004
• Grant date: Aug 8, 2006
• Expiry date: Nov 1, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/62

Abstract

A non-volatile storage cell in a Fin Field Effect Transistor (FinFET) and a method of forming an Integrated Circuit (IC) chip including the non-volatile storage cell. Each FET includes a control gate along one side of a semiconductor (e.g., silicon) fin, a floating gate along an opposite of the fin and a program gate alongside the floating gate. Control gate device thresholds are adjusted by adjusting charge on the floating gate.