Semiconductor device and a method of manufacturing the same
US7087955B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Nov 16, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A semiconductor device has a nonvolatile memory employing a split-gate type memory cell structure, using a nitride film as a charge storage layer. An n-type semiconductor region is formed in a main surface of a semiconductor substrate, and then, a memory gate electrode of a memory cell of a split gate type and a charge storage layer are formed over the semiconductor region. Subsequently, side walls are formed on side surfaces of the memory gate electrode, and a photoresist pattern is formed over the main surface of the semiconductor substrate. The photoresist pattern serves as an etching mask, and a part of the main surface of the semiconductor substrate is removed by etching to form a dent. In the region of the dent, the n-type semiconductor region is removed. Then, a p-type semiconductor region for forming a channel of an nMIS transistor for selecting a memory cell is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.