Magnetoelectronic devices utilizing protective capping layers and methods of fabricating the same

US7087972B1 · kind B1 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• J. Ren · Phoenix, US
• Brian R. Butcher · Gilbert, US
• Mark Durlam · Chandler, US
• Gregory W. Grynkewich · Gilbert, US

Key dates

• Filing date: Jan 31, 2005
• Grant date: Aug 8, 2006
• Expiry date: Jan 31, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/22

Abstract

Magnetoelectronic device structures and methods for fabricating the same are provided. One method comprises forming a first and a second conductor. The first conductor is electrically coupled to an interconnect stack. A first insulating layer is deposited overlying the first conductor and the second conductor. A via is etched to substantially expose the first conductor. A protective capping layer is deposited by electroless deposition within the via and is electrically coupled to the first conductor. A magnetic memory element layer is formed within the via and overlying the second insulating layer and the second conductor.