Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method

US7087981B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Holger Kapels · Holzkirchen, DE
• Anton Mauder · Kolbermoor, DE
• Hans-Joachim Schulze · Taufkirchen, DE
• Helmut Strack · Hersbruck, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE

Key dates

• Filing date: Apr 21, 2003
• Grant date: Aug 8, 2006
• Expiry date: Apr 21, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.