Evaluating a multi-layered structure for voids
US7088444B2 · kind B2 · utility
1Cited by
43References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Nov 8, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2656
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus measure properties of two layers of a damascene structure (e.g. a silicon wafer during fabrication), and use the two measurements to identify a location as having voids. The two measurements may be used in any manner, e.g. compared to one another, and voids are deemed to be present when the two measurements diverge from each other. In response to the detection of voids, a process parameter used in fabrication of the damascene structure may be changed, to reduce or eliminate voids in to-be-formed structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.