MRAM with switchable ferromagnetic offset layer
US7088611B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Nov 30, 2004 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Nov 30, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive memory cell includes a magnetic tunnel junction including first (fixed) and second (free) magnetic regions, where the second magnetic region includes at least two ferromagnetic layers being antiferromagnetically coupled. The magnetoresistive memory cell further includes a switchable ferromagnetic offset field layer being provided with a free magnetic moment vector that is freely switchable between the same and opposite directions with respect to the fixed magnetic moment vector of the first magnetic region. A method of switching a magnetoresistive memory cell includes adiabatic rotational switching, where the memory cell is brought in an active state exhibiting reduced switching fields before its switching and is brought in a passive state exhibiting enlarged switching fields after its switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.