Altis Semiconductor
🏢 View company profile →29Patents
13Active
29Granted
43Portfolio score
Filing activity: Jul 30, 2004 → Mar 11, 2014 · 6 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7212432B2 | Resistive memory cell random access memory device and method of fabrication | Electricity | 99 | Expired |
| US7180160B2 | MRAM storage device | Electricity | 62 | Expired |
| US7092284B2 | MRAM with magnetic via for storage of information and field sensor | Physics | 50 | Expired |
| US7411815B2 | Memory write circuit | Physics | 49 | Expired |
| US7099186B1 | Double-decker MRAM cells with scissor-state angled reference layer magnetic anisotropy and method for fabricating | Electricity | 31 | Expired |
| US7180113B2 | Double-decker MRAM cell with rotated reference layer magnetizations | Physics | 23 | Expired |
| US7068533B2 | Resistive memory cell configuration and method for sensing resistance values | Physics | 14 | Expired |
| US7411854B2 | System and method for controlling constant power dissipation | Physics | 10 | Active |
| US7075807B2 | Magnetic memory with static magnetic offset field | Electricity | 9 | Expired |
| US7154771B2 | Method of switching an MRAM cell comprising bidirectional current generation | Physics | 6 | Expired |
| US7061797B1 | Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell | Physics | 6 | Expired |
| US7130206B2 | Content addressable memory cell including resistive memory elements | Physics | 6 | Expired |
| US7381574B2 | Method of forming dual interconnects in manufacturing MRAM cells | Electricity | 6 | Active |
| US7200032B2 | MRAM with vertical storage element and field sensor | Electricity | 4 | Expired |
| US7088611B2 | MRAM with switchable ferromagnetic offset layer | Physics | 4 | Expired |
| US8420481B2 | Memory cell device and method of manufacture | Electricity | 4 | Active |
| US7715258B2 | Retention test system and method for resistively switching memory devices | Physics | 3 | Active |
| US8501525B2 | Method of fabrication of programmable memory microelectric device | Electricity | 2 | Active |
| US8501533B2 | Method of etching a programmable memory microelectronic device | Electricity | 2 | Active |
| US7200033B2 | MRAM with coil for creating offset field | Physics | 2 | Expired |
| US7127954B2 | Method and device for measuring the flow rate of a fluid | Physics | 1 | Expired |
| US9514308B2 | Tamper detection arrangement for integrated circuits | Electricity | 1 | Active |
| US8883654B2 | Method of treating an oxidized layer of metal nitride | Emerging Cross-Sectional Technologies | 0 | Active |
| US8597975B2 | Method of fabricating a microelectronic device with programmable memory | Electricity | 0 | Active |
| US7334317B2 | Method of forming magnetoresistive junctions in manufacturing MRAM cells | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.