Programming method for a multilevel memory cell
US7088614B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 26, 2002 |
| Grant date | Aug 8, 2006 |
| Priority date | — |
| Expiry date | Apr 6, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programming method of a multilevel memory cell is able to store a plurality of bits in a plurality of levels. The method includes writing a logic value in the multilevel memory cell by setting one of the programming levels thereof, these levels being included in the plurality of levels, with respect to a reference level according to the symbol to be written and to a previous programming level. The writing step is repeated until a highest possible value for the levels is reached. A multilevel memory device includes a plurality of multilevel memory cells organized into sectors, split into a plurality of data units whereon a programming operation is performed in parallel.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.