Patent · US Expired

Structures and methods for selectively applying a well bias to portions of a programmable device

US7089527B2 · kind B2 · utility

11Cited by
12References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 25, 2004
Grant dateAug 8, 2006
Priority date
Expiry dateDec 4, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/907
  • WIPO fieldBasic communication processes
  • WIPO sectorElectrical engineering

Abstract

Structures and methods for selectively applying a well bias to only those portions of a PLD where such a bias is necessary or desirable, e.g., applying a positive well bias to transistors on critical paths within a user's design. A substrate for an integrated circuit includes a plurality of wells, each of which can be independently and programmably biased with the same or a different well bias voltage. In one embodiment, FPGA implementation software automatically determines the critical paths and generates a configuration bitstream that enables positive well biasing only for the transistors participating in the critical paths, or only for programmable logic elements (e.g., CLBs or lookup tables) containing those transistors. In another embodiment, negative well biasing is selectively applied to reduce leakage current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.