Single phase fluid imprint lithography method
US7090716B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 2, 2003 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Mar 20, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to the viscous liquid being deposited. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.