Patent · US Expired

Single phase fluid imprint lithography method

US7090716B2 · kind B2 · utility

43Cited by
142References
30Claims
0Family size

Assignees

Inventors

Key dates

Filing dateOct 2, 2003
Grant dateAug 15, 2006
Priority date
Expiry dateMar 20, 2024

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S438/909
  • WIPO fieldMicro-structural and nano-technology
  • WIPO sectorChemistry

Abstract

The present invention is directed toward a method for reducing pattern distortions in imprinting layers by reducing gas pockets present in a layer of viscous liquid deposited on a substrate. To that end, the method includes varying a transport of the gases disposed proximate to the viscous liquid. Specifically, the atmosphere proximate to the substrate wherein a pattern is to be recorded is saturated with gases that are either highly soluble, highly diffusive, or both with respect to the viscous liquid being deposited. Additionally, or in lieu of saturating the atmosphere, the pressure of the atmosphere may be reduced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.