Method of manufacturing a photo mask and method of manufacturing a semiconductor device
US7090949B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2003 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Jun 26, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/68
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Disclosed is a method of manufacturing a photo mask comprising preparing mask data for a mask pattern to be formed on a mask substrate, calculating edge moving sensitivity with respect to each of patterns included in the mask pattern using the mask data, the edge moving sensitivity corresponding to a difference between a proper exposure dose and an exposure dose to be set when a pattern edge varies, determining a monitor portion of the mask pattern, based on the calculated edge moving sensitivity, actually forming the mask pattern on the mask substrate, acquiring a dimension of a pattern included in that portion of the mask pattern formed on the mask substrate which corresponds to the monitor portion, determining evaluation value for the mask pattern formed on the mask substrate, based on the acquired dimension, and determining whether the evaluation value satisfies predetermined conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.