Patent · US Expired

Pattern transfer in device fabrication

US7090967B2 · kind B2 · utility

1Cited by

4References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Zhijian Lu · Montgomery, US
Chieh-Yu Lin · Hsinchu, TW

Key dates

Filing date	Dec 30, 2002
Grant date	Aug 15, 2006
Priority date	—
Expiry date	Aug 15, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/32139
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of transferring a pattern onto a substrate, in the fabrication of ICs, is disclosed. The substrate is coated with a photoresist layer, wherein the photoresist layer is selectively exposed and developed, producing sidewalls that exhibit roughness. The roughness is smoothened out by coating the photoresist layer with a coating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.