Method of forming devices having three different operation voltages
US7091079B2 · kind B2 · utility
49Cited by
5References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Feb 5, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
The present invention provides a method of forming devices having different operation voltages. First, a substrate having an HV region, an MV region, and an LV region is provided. Then, at least a deep well encompassing the LV region and the MV region is formed in the substrate. Afterward, a plurality of n-wells and a plurality of p-wells are in the HV region, the MV region, and the LV region. Following that, a plurality of HV devices are formed in the HV region, a plurality of MV devices are formed in the MV region, and a plurality of LV devices are formed in the LV region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.