Jung-Ching Chen
15Patents
5h-index
26Co-inventors
58Inventor score
Filing activity: Jul 25, 2004 → Jun 17, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7091079B2 | Method of forming devices having three different operation voltages | Electricity | 49 | Expired |
| US7244975B2 | High-voltage device structure | Electricity | 11 | Expired |
| US7256092B2 | Method for fabricating integrated circuits having both high voltage and low voltage devices | Electricity | 7 | Expired |
| US7868372B2 | Depletion-mode single-poly EEPROM cell | Physics | 7 | Active |
| US8026549B2 | LDMOS with N-type isolation ring and method of fabricating the same | Electricity | 7 | Active |
| US7388250B2 | Non-volatile memory cell and manufacturing method thereof | Electricity | 3 | Expired |
| US7479426B2 | Method of manufacturing non-volatile memory cell | Electricity | 1 | Active |
| US7405442B2 | Electrically erasable programmable read-only memory cell and memory device | Electricity | 1 | Active |
| US8052920B2 | Apparatus for observing interior of a blast furnace system | Emerging Cross-Sectional Technologies | 1 | Active |
| US7528076B2 | Method for manufacturing gate oxide layer with different thicknesses | Electricity | 1 | Active |
| US7408221B2 | Electrically erasable programmable read-only memory cell and memory device and manufacturing method thereof | Electricity | 0 | Active |
| US7250339B2 | Electrically erasable programmable read-only memory cell and memory device and manufacturing method thereof | Electricity | 0 | Active |
| US9153454B2 | Method of fabricating high voltage device | Electricity | 0 | Active |
| US7741659B2 | Semiconductor device | Electricity | 0 | Active |
| US7405123B2 | Electrically erasable programmable read-only memory cell and memory device and manufacturing method thereof | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.