Depletion implant for power MOSFET
US7091080B2 · kind B2 · utility
3Cited by
15References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2002 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Jul 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A vertical MOSFET has a substrate of a first conductivity type. A channel region of a second conductivity type is diffused into the substrate. A gate is disposed at least partially over the channel region. A source region of a second conductivity type is disposed proximate to the gate and adjacent to the channel region. The channel region includes a depletion implant area proximate to the gate. The depletion implant species is of the second conductivity type to reduce the concentration of the first conductivity type in the channel region without increasing the conductivity in the drain/drift region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.