Programmable memory devices supported by semiconductor substrates
US7091549B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2004 |
| Grant date | Aug 15, 2006 |
| Priority date | — |
| Expiry date | Dec 9, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/681
Abstract
The invention includes a memory device supported by a semiconductor substrate and comprising in ascending order from the substrate: a floating gate, a dielectric material, a layer consisting essentially of tungsten nitride, a first mass consisting essentially of tungsten, and a second mass consisting essentially of one or more nitride compounds. The invention includes a memory device having a floating gate and a dielectric material over the floating gate. The device has a mass consisting essentially of tungsten over the dielectric material, with the mass having a pair of opposing sidewalls. A pair of sidewall spacers are along the opposing sidewalls of the mass. The sidewall spacers comprise a first layer consisting essentially of one or more nitride compounds and a second layer different from the first layer. The invention includes methods of making memory devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.